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Built-in bias resistor digital transistor ROHM DTD123YKT146 designed for inverter switching and driver applications

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Built-in bias resistor digital transistor ROHM DTD123YKT146 designed for inverter switching and driver applications

Output Voltage(VO(on)) : 300mV

Input Resistor : 2.86kΩ

Resistor Ratio : 4.5

Number : -

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 500mA 200mW Surface Mount TO-236-3(SOT-23-3)

Mfr. Part # : DTD123YKT146

Model Number : DTD123YKT146

Package : TO-236-3(SOT-23-3)

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Product Overview

The ROHM DTD123YK is an NPN digital transistor featuring built-in bias resistors, enabling simplified circuit design for inverter and switching applications without external resistors. This design facilitates easy configuration of inverter circuits and allows for negative input biasing due to the thin-film resistors with complete isolation, eliminating parasitic effects. It is suitable for switching, inverter, interface, and driver circuits. Complementary PNP type is DTB123YK. This product is Lead Free and RoHS Compliant.

Product Attributes

  • Brand: ROHM
  • Certifications: Lead Free, RoHS Compliant
  • Type: NPN Digital Transistor (Bias Resistor Built-in Transistor)

Technical Specifications

Parameter Symbol Value Unit Conditions
Outline & Features
Supply Voltage VCC 50 V
Max. Collector Current IC(MAX.) 500 mA
Built-in Resistor R1 R1 2.2 k
Built-in Resistor R2 R2 10 k
Part No. DTD123YK
Package SOT-346 (SC-59)
Package Size (mm) 1/5
Taping Code T146
Reel Size (mm) 2928
Tape Width (mm) 180
Basic Ordering Unit (pcs) 3,000
Marking F62
Absolute Maximum Ratings (Ta = 25C)
Supply voltage VCC 50 V
Input voltage VIN -5 to +12 V
Collector current IC 500 mA *1
Power dissipation PD 200 mW *2
Junction temperature Tj 150 C
Range of storage temperature Tstg -55 to +150 C
Electrical Characteristics (Ta = 25C)
Input voltage (OFF) VI(off) - V VCC = 5V, IO = 100mA
Input voltage (ON) VI(on) 2.0 V VO = 0.3V, IO = 20mA
Input current II - 3.6 VI = 5V
Output voltage (ON) VO(on) - 0.3 IO / II = 50mA / 2.5mA
DC current gain GI 56 - VO = 5V, IO = 50mA
Output current (OFF) IO(off) - 0.5 VCC = 50V, VI = 0V
Resistance ratio R2/R1 3.6 to 5.5 -
Input resistance R1 1.54 to 2.86 k
Transition frequency fT 200 MHz VCE = 10V, IE = -50mA, f = 100MHz (*1)
Dimensions (Unit : mm)
Package Size (mm) SMT3
A (mm) 1.00 - 1.30
A1 (mm) 0.00 - 0.10
A3 (mm) 0.05
b (mm) 0.35 - 0.50
c (mm) 0.09 - 0.25
D (mm) 2.80 - 3.00
E (mm) 1.50 - 1.80
e (mm) 0.95
HE (mm) 2.60 - 3.00
L1 (mm) 0.30 - 0.60
Lp (mm) 0.40 - 0.70
Q (mm) 0.20 - 0.30
x (mm) - 0.10
y (mm) - 0.10
b2 (mm) 0.60
e1 (mm) 2.10
l1 (mm) - 0.90

2012251033_ROHM-DTD123YKT146_C919455.pdf


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