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Built in bias resistor PNP digital transistor ROHM DTA143XE3TL for simplified inverter circuit design

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Built in bias resistor PNP digital transistor ROHM DTA143XE3TL for simplified inverter circuit design

Current - Collector Cutoff : 500nA

DC Current Gain : 30@10mA,5V

Current - Collector(Ic) : 100mA

type : NPN

Output Voltage(VO(on)) : 300mV@10mA,0.5mA

Transition frequency(fT) : 250MHz

Input Resistor : 4.7kΩ

Vce Saturation(VCE(sat)) : 300mV@500uA,10mA

Resistor Ratio : 2.1

Pd - Power Dissipation : 150mW

Collector - Emitter Voltage VCEO : 50V

Description : 30@10mA,5V 100mA 150mW 50V Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : DTA143XE3TL

Model Number : DTA143XE3TL

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Product Overview

The DTA143X series are PNP digital transistors featuring built-in bias resistors, simplifying inverter circuit design by eliminating the need for external input resistors. These transistors are designed for easy circuit configuration, requiring only the setting of on/off conditions for operation. They are suitable for inverter, interface, and driver applications.

Product Attributes

Brand: ROHM

Technical Specifications

Model	Package	Package Size	VCC (Max.)	IC (Max.)	R1	R2	Power Dissipation (mW)	Marking
DTA143XM	SOT-723	1212	-50V	-100mA	4.7k	10k	150	33
DTA143XEB	SOT-416FL	1616	-50V	-100mA	4.7k	10k	150	33
DTA143XE3	SOT-416	1616	-50V	-100mA	4.7k	10k	150	33
DTA143XUB	SOT-323FL	2021	-50V	-100mA	4.7k	10k	200	33
DTA143XU3	SOT-323	2021	-50V	-100mA	4.7k	10k	200	33
DTA143XKA	SOT-346	2928	-50V	-100mA	4.7k	10k	200	33

Electrical Characteristics (Ta = 25C)

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Input voltage (off)	VI(off)	VCC = -5V, IO = -100A	-	-	-0.3	V
Input voltage (on)	VI(on)	VO = -0.3V, IO = -20mA	-2.5	-	-	V
Output voltage (on)	VO(on)	IO = -10mA, II = -0.5mA	-	-100	-300	mV
Input current	II	VI = -5V	-	-	-1.8	mA
Output current (off)	IO(off)	VCC = -50V, VI = 0V	-	-	-500	nA
DC current gain	GI	VO = -5V, IO = -10mA	30	-	-	-
Input resistance	R1		-	3.29	6.11	k
Resistance ratio	R2/R1		-	1.7	2.6	-
Transition frequency	fT	VCE = -10V, IE = 5mA, f = 100MHz	-	250	-	MHz

Absolute Maximum Ratings (Ta = 25C)

Parameter	Symbol	Values	Unit
Supply voltage	VCC	-50	V
Input voltage	VIN	-20 to 7	V
Output current	IO	-100	mA
Collector current	IC(MAX)*1	-100	mA
Junction temperature	Tj	150
Range of storage temperature	Tstg	-55 to +150

2401251540_ROHM-DTA143XE3TL_C20108219.pdf

Built in bias resistor PNP digital transistor ROHM DTA143XE3TL for simplified inverter circuit design Images

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