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Dual digital transistor ROHM UMD22NFHATR in compact SOT363 package with independent NPN and PNP elements

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Dual digital transistor ROHM UMD22NFHATR in compact SOT363 package with independent NPN and PNP elements

DC Current Gain : 80@10mA,5V

Operating Temperature : -40℃~+150℃

Current - Collector(Ic) : 100mA

Output Voltage(VO(on)) : 300mV

Input Resistor : 4.7kΩ

Resistor Ratio : 10

Number : 1 PNP Pre-Biased Transistor, 1 NPN

Pd - Power Dissipation : 150mW

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 150mW Surface Mount SOT-363

Mfr. Part # : UMD22NFHATR

Model Number : UMD22NFHATR

Package : SOT-363

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Product Overview

The UMD22N FHA is a general-purpose dual digital transistor, AEC-Q101 qualified, combining both NPN (DTr1) and PNP (DTr2) transistor elements in a single UMT6 package (SOT-363). This configuration offers significant advantages, including halved mounting costs and area, independent transistor elements to eliminate interference, and compatibility with UMT3 automatic mounting machines. It is ideally suited for applications such as inverters, interfaces, and drivers.

Product Attributes

  • Brand: ROHM
  • Qualification: AEC-Q101
  • Package Type: SOT-363 (UMT6)
  • Features: Dual digital transistor (NPN & PNP), independent elements, reduced mounting cost/area.
  • Mounting Compatibility: UMT3 automatic mounting machines

Technical Specifications

Parameter Symbol DTr1 (NPN) DTr2 (PNP) Unit
Outline Parameters
Supply Voltage VCC 50 -50 V
Max. Output Current IC(MAX.) 100 -100 mA
Internal Resistor R1 R1 4.7k 4.7k
Internal Resistor R2 R2 47k 47k
Absolute Maximum Ratings (Ta = 25C)
Supply Voltage VCC 50 -50 V
Input Voltage VIN -5 to 30 -30 to 5 V
Output Current IO 100 -100 mA
Collector Current (MAX) IC(MAX)*1 100 -100 mA
Power Dissipation PD*2*3 150 mW/Total
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 to +150
Electrical Characteristics (Ta = 25C) - DTr1 (NPN)
Input Voltage (off) VI(off) - 0.5 V
Input Voltage (on) VI(on) 1.3 - V
Output Voltage (on) VO(on) 100 to 300 - mV
Input Current II - 1.8 mA
Output Current (off) IO(off) - 500 nA
DC Current Gain GI 80 - -
Input Resistance R1 3.29 to 6.11 - k
Resistance Ratio R2/R1 8 to 12 - -
Transition Frequency fT*1 250 - MHz
Electrical Characteristics (Ta = 25C) - DTr2 (PNP)
Input Voltage (off) VI(off) - -0.5 V
Input Voltage (on) VI(on) - -1.3 V
Output Voltage (on) VO(on) - -100 to -300 mV
Input Current II - -1.8 mA
Output Current (off) IO(off) - -500 nA
DC Current Gain GI - 80 -
Input Resistance R1 - 3.29 to 6.11 k
Resistance Ratio R2/R1 - 8 to 12 -
Transition Frequency fT*1 - 250 MHz
Packaging Specifications
Part No. UMD22N FHA
Package SOT-363 (UMT6)
Taping Code TR
Reel Size (mm) 180
Tape Width (mm) 8
Basic Ordering Unit (pcs) 3000
Marking D22

*1 Characteristics of built-in transistor.
*2 Each terminal mounted on a reference land.
*3 120mW per element must not be exceeded.


2301031430_ROHM-UMD22NFHATR_C5336710.pdf


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